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| MICROWAVE CORPORATION v01.0801 HMC239S8 GaAs MMIC SPDT SWITCH DC - 2.5 GHz Features Low Insertion Loss: 0.4 dB High Isolation: 35 dB Fast Switching Speed: 2ns High Input IP3: +50 dBm Typical Applications The HMC239S8 is ideal for: * MMDS & WirelessLAN * Basestation Infrastructure * Portable Wireless Functional Diagram General Description The HMC239S8 is a low-cost GaAs MMIC SPDT switch in an 8-lead SOIC package. The switch can control signals from DC to 2.5 GHz. It is especially suited for low or medium power applications which require extremely fast switching with minimal insertion loss. The two control voltages require a minimal amount of DC current which is optimal for battery powered radio systems. RF1 and RF2 are reflective shorts when "Off". 14 SWITCHES - SMT Electrical Specifications, TA = +25 C, Vctl = 0/-5V, 50 Ohm System Parameter Frequency DC - 0.1 GHz DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz 0/-5V Control 0.5 - 1.0 GHz 0.5 - 2.5 GHz 0.5 - 1.0 GHz 0.5 - 2.5 GHz DC - 2.5 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 2 10 ns ns 33 26 18 14 18 17 15 25 23 45 44 Min. Typ. 0.4 0.4 0.5 0.6 0.7 36 29 21 17 21 21 20 29 27 50 49 Max. 0.6 0.6 0.7 0.8 1.0 Units dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm Insertion Loss Isolation Return Loss Input Power for 1dB Compression Input Third Order Intercept (Two-Tone Input Power = +7 dBm Each Tone) Switching Characteristics 0/-5V Control 14 - 118 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0801 MICROWAVE CORPORATION HMC239S8 GaAs MMIC SPDT SWITCH DC - 2.5 GHz Insertion Loss 0 -0.5 Isolation 0 -10 INSERTION LOSS (dB) -1 -1.5 -2 -2.5 -3 0 1 2 3 FREQUENCY (GHz) ISOLATION (dB) -20 RF1 -30 RF2 -40 -50 -60 0 1 2 3 FREQUENCY (GHz) Return Loss 0 14 SWITCHES - SMT -9 RETURN LOSS (dB) -10 -20 -30 -40 0 1 2 3 FREQUENCY (GHz) Input 0.1 and 1.0 dB Compression vs. Control Voltage 35 P1 dB at 900 MHz P1 dB at 1900 MHz Input Third Order Distortion vs. Control Voltage 55 COMPRESSION (dBm) 900 MHz 30 IP3 (dBm) 50 1900 MHz 25 P0.1 dB at 900 MHz P0.1 dB at 1900 MHz 20 -4 -5 -6 -7 -8 -9 CONTROL VOLTAGE (Vdc) 45 -4 -5 -6 -7 -8 CONTROL VOLTAGE (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 14 - 119 MICROWAVE CORPORATION v01.0801 HMC239S8 GaAs MMIC SPDT SWITCH DC - 2.5 GHz Truth Table *Control Input Voltage Tolerances are 0.2 Vdc. Control Input* A (Vdc) -5 0 -6 0 -7 0 -8 0 B (Vdc) 0 -5 0 -6 0 -7 0 -8 Control Current Ia (uA) -25 10 -75 30 -130 60 -190 80 Ib (uA) 10 -25 30 -75 60 -130 80 -190 Signal Path State RF to RF1 ON OFF ON OFF ON OFF ON OFF RF to RF2 OFF Compression vs. Bias Voltage Carrier at 900 MHz Control Input (Vdc) ON -5 OFF -6 ON -8 OFF OM OFF ON 29 33 28 32 27 31 26 29 25 29 23 27 Input Power for 0.1 dB Compression (dBm) Input Power for 1.0 dB Compression (dBm) Carrier at 1900 MHz Input Power for 0.1 dB Compression (dBm) Input Power for 1.0 dB Compression (dBm) Caution: Do not operate in 1 dB compression at power levels above +30 dBm and do not "hot switch" power levels greater than +20 dBm (Vctl= -5 Vdc). Distortion vs. Bias Voltage Control Input (Vdc) -5 Third Order Intercept (dBm) +7 dBm Each Tone 900 MHz 50 53 1900 MHz 49 51 14 SWITCHES - SMT -8 14 - 120 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0801 HMC239S8 GaAs MMIC SPDT SWITCH DC - 2.5 GHz Absolute Maximum Ratings Max. Input Power (VCTL = 0/-8V) 0.05 GHz 0.5 - 2 GHz +27 dBm +34 dBm +2 to -12 Vdc -65 to +150 C -40 to +85 C Control Voltage Range (A & B) Storage Temperature Operating Temperature Outline Drawing 14 SWITCHES - SMT 14 - 121 NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0801 HMC239S8 GaAs MMIC SPDT SWITCH DC - 2.5 GHz Typical Application Circuit 14 SWITCHES - SMT Simple driver using inexpensive standard logic ICs provides fast switching using minimum DC current. 14 - 122 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0801 HMC239S8 GaAs MMIC SPDT SWITCH DC - 2.5 GHz Evaluation Circuit Board 14 SWITCHES - SMT 14 - 123 List of Material Item J1 - J3 J4 - J6 C1 - C3 U1 PCB* Description PC Mount SMA RF Connector DC Pin 330 pF capacitor, 0402 Pkg. HMC239S8 SPDT Switch 101780 Evaluation PCB The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com |
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